As the industry adopts FinFETs as the transistor for 16nm and 14nm, researchers are looking into the limits of FinFETs and solutions for the 7nm node and beyond. 2 approaches, namely Gate-All-Around Nanowire (GAA NW) FETs, which offer significantly better short-channel electrostatics, and quantum-well FinFETs (with SiGe, Ge, or III-V channels), which achieve high carrier mobility, are promising options.

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